r07ds1191ej0200 rev.2.00 page 1 of 7 apr 02, 2014 preliminary datasheet rjh60t04dpq-a1 600v - 30a - igbt application:current resonance circuit features ? optimized for current resonance application ? low collector to emitter saturation voltage v ce(sat) = 1.5 v typ. (at i c = 30 a, v ge = 15 v, ta = 25c) ? built in fast recovery diode in one package ? trench gate and thin wafer technology ? high speed switching t f = 45 ns typ. (at v cc = 400 v, v ge = 15 v , i c = 30 a, rg = 10 , ta = 25c , inductive load) ? low tail loss e tail = 160 j typ. (at v cc = 300 v, v ge = 20 v, i c = 50 a, rg = 15 , tc = 125 c, current resonance circuit) outline 1. gate 2. collecto r 3. emitter 4. collecto r c g e 1 2 3 4 renesas package code: prss0003zh-a (package name: to-247a) absolute maximum ratings (tc = 25c) item symbol ratings unit collector to emitter voltage v ces 600 v gate to emitter voltage v ges 30 v collector current tc = 25 c i c note1 60 a tc = 100 c i c note1 30 a collector peak current i c (peak) note1 180 a collector to emitter diode forward peak current i df (peak) note2 80 a collector dissipation p c 208.3 w junction to case thermal impedance (igbt) j-c 0.6 c/w junction to case thermal impedance (diode) j-cd 2.1 c/w junction temperature tj 150 c storage temperature tstg ?55 to +150 c notes: 1. pulse width limited by safe operating area. 2. pw 5 s, duty cycle 1% r07ds1191ej0200 rev.2.00 a pr 02, 2014
rjh60t04dpq-a1 preliminary r07ds1191ej0200 rev.2.00 page 2 of 7 apr 02, 2014 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions zero gate voltage collector current i ces ? ? 100 a v ce = 600 v, v ge = 0 gate to emitter leak current i ges ? ? 1 a v ge = 30 v, v ce = 0 gate to emitter cutoff voltage v ge(off) 4 ? 8 v v ce = 10v, i c = 1 ma collector to emitter saturation voltage v ce(sat) ? 1.50 1.95 v i c = 30 a, v ge = 15v note3 input capacitance cies ? 1910 ? pf v ce = 25 v v ge = 0 f = 1 mhz output capacitance coes ? 69 ? pf reveres transfer capacitance cres ? 34 ? pf total gate charge qg ? 87 ? nc v ge = 15 v v ce = 300 v i c = 30 a gate to emitter charge qge ? 18 ? nc gate to collector charge qgc ? 41 ? nc turn-on delay time t d(on) ? 54 ? ns v cc = 400 v v ge = 15 v i c = 30 a, rg = 10 inductive load rise time t r ? 52 ? ns turn-off delay time t d(off) ? 136 ? ns fall time t f ? 45 ? ns tail loss e tail ? 160 ? j v cc = 300 v, v ge = 20 v i c = 50 a, rg = 15 tc = 125 c current resonance circuit c-e diode forward voltage v ecf ? 1.2 1.6 v i f = 20 a note3 c-e diode reverse recovery time t rr ? 100 ? ns i f = 10 a di f /dt = ? 100 a/ s notes: 3. pulse test
rjh60t04dpq-a1 preliminary r07ds1191ej0200 rev.2.00 page 3 of 7 apr 02, 2014 main characteristics i c = 6 0 a 30 a 1 5 a 4 3 2 1 120 4 0 8 0 100 20 6 0 typi ca l o u t pu t c h aracter is t i c s 120 4 0 8 0 100 20 6 0 123 45 co ll ector c u rrent i c (a) 0 0 co ll ector to e m i tter v o l tage v c e ( v ) 0 t a = 2 5 c p uls e t e s t v g e = 9 v 10 v 11 v 11 v typi ca l o u t pu t c h aracter is t i c s 123 45 co ll ector c u rrent i c (a) 0 co ll ector to e m i tter v o l tage v c e ( v ) v g e = 9 v 10 v co ll ector c u rrent i c (a) ca s e t em p erat u re t c ( c) m a xi m u m d c co ll ector c u rrent vs. ca s e t em p erat u re 02 55 0100 7 5 12 5 1 5 017 5 8 0 6 0 4 0 20 0 t a = 1 5 0 c p uls e t e s t gate to e m i tter v o l tage v g e ( v ) co ll ector to e m i tter sat ul ar i on v o l tage vs. gate to e m i tter v o l tage ( typi ca l ) co ll ector to e m i tter sat ul ar i on v o l tage vs. gate to e m i tter v o l tage ( typi ca l ) co ll ector to e m i tter sat ul ar i on v o l tage v c e ( s at) ( v ) co ll ector to e m i tter sat ul ar i on v o l tage v c e ( s at) ( v ) gate to e m i tter v o l tage v g e ( v ) 4 3 2 1 8 12 20 1 6 t a = 2 5 c p uls e t e s t i c = 6 0 a 30 a 1 5 a 8 12 20 1 6 t a = 1 5 0 c p uls e t e s t 13 v 1 5 v 13 v 1 5 v co ll ector c u rrent i c (a) m a xi m u m sa f e o p erat i on area co ll ector to e m i tter v o l tage v c e ( v ) 1000 100 10 110100 1 0 . 1 1000 p w = 10 s t a = 2 5 c 1 sh ot puls e
rjh60t04dpq-a1 preliminary r07ds1191ej0200 rev.2.00 page 4 of 7 apr 02, 2014 co ll ector c u rrent i c (a) gate to e m i tter v o l tage v g e ( v ) t ran sf er c h aracter is t i c s ( typi ca l ) 0 468 10 1 4 12 co ll ector to e m i tter sat u rat i on v o l tage vs. ca s e t em p arat u re ( typi ca l ) co ll ector to e m i tter sat u rat i on v o l tage v c e ( s at) ( v ) ca s e t em p arat u re t c ( c) ? 2 5 02 5 7 5 12 5 5 0100 1 5 0 3 .5 3 . 0 1 . 0 0 .5 2 . 0 1 .5 2 .5 30 a 1 5 a i c = 6 0 a v g e = 1 5 v p uls e t e s t 10 8 6 4 2 0 gate to e m i tter c u to ff v o l tage vs. ca s e t em p arat u re ( typi ca l ) ? 2 5 02 5 7 5 12 5 5 0 100 1 5 0 gate to e m i tter c u to ff v o l tage v g e (o ff ) ( v ) v c e = 10 v p uls e t e s t ca s e t em p arat u re t c ( c) 1 ma i c = 10 ma ca p ac i tance c ( pf ) 1 10 100 10000 1000 0 5 0 100 200 1 5 02 5 0 300 c i e s coe s cre s typi ca l ca p ac i tance vs. co ll ector to e m i tter v o l tage v g e = 0 v f = 1 mhz t a = 2 5 c co ll ector to e m i tter v o l tage v c e ( v ) gate c h arge q g ( c) dy nam i c i n pu t c h aracter is t i c s ( typi ca l ) 8 00 6 00 4 00 200 0 0 1 6 12 8 4 0 20 4 0 6 0 8 0 100 v g e v c e co ll ector to e m i tter v o l tage v c e ( v ) gate to e m i tter v o l tage v g e ( v ) i c = 30 a t a = 2 5 c v cc = 48 0 v 300 v 120 v v cc = 48 0 v 300 v 120 v 120 4 0 20 100 8 0 6 0 v c e = 10 v p uls e t e s t t a = 1 5 0 c 2 5 c di ode f or w ard c u rrent i f (a) 0 20 4 0 6 0 8 0 100 00 .5 1 . 01 .5 2 . 02 .5 3 . 0 v g e = 0 v p uls e t e s t c -e di ode f or w ard v o l tage v c ef ( v ) f or w ard c u rrent vs. f or w ard v o l tage ( typi ca l ) t a = 2 5 c 1 5 0 c
rjh60t04dpq-a1 preliminary r07ds1191ej0200 rev.2.00 page 5 of 7 apr 02, 2014 110 100 110 100 100 1000 1 10 110100 100 1000 10 s wi tc hi ng c h aracter is t i c s ( typi ca l ) (3) gate reg is tance rg ( ) ( i nd u ct iv e l oad) s wi tc hi ng c h aracter is t i c s ( typi ca l ) ( 4 ) gate reg is tance rg ( ) ( i nd u ct iv e l oad) e o ff e on s wi t hi ng e nerg y l o ss e s e (m j ) s wi tc hi ng ti me s t (n s ) 0 . 01 0 . 1 10 1 0 . 1 10 1 v cc = 4 00 v, v g e = 1 5 v rg = 10 , t a = 1 5 0 c s wi t hi ng e nerg y l o ss e s e (m j ) 110100 co ll ector c u rrent i c (a) ( i nd u ct iv e l oad) e o ff e on s wi tc hi ng c h aracter is t i c s ( typi ca l ) (1) s wi tc hi ng c h aracter is t i c s ( typi ca l ) (2) co ll ector c u rrent i c (a) ( i nd u ct iv e l oad) s wi tc hi ng ti me s t (n s ) v cc = 4 00 v, v g e = 1 5 v rg = 10 , t a = 1 5 0 c t d(o ff ) t d(on) t f t r v cc = 4 00 v, v g e = 1 5 v i c = 30 a , t c = 1 5 0 c v cc = 4 00 v, v g e = 1 5 v i c = 30 a , t c = 1 5 0 c t d(o ff ) t r t f t d(on) 10 100 1000 5 0 2 5 1 5 0 7 5 12 5 100 s wi tc hi ng c h aracter is t i c s ( typi ca l ) ( 5 ) ca s e t em p erat u re t c ( c) ( i nd u ct iv e l oad) s wi tc hi ng ti me s t (n s ) v cc = 4 00 v, v g e = 1 5 v i c = 30 a , rg = 10 t f t d(o ff ) 0 . 1 1 10 5 0 2 5 1 5 0 7 5 12 5 100 ca s e t em p erat u re t c ( c) ( i nd u ct iv e l oad) s wi tc hi ng c h aracter is t i c s ( typi ca l ) ( 6 ) e o ff e on s wi t hi ng e nerg y l o ss e s e (m j ) t r t d(on) v cc = 4 00 v, v g e = 1 5 v i c = 30 a , rg = 10
rjh60t04dpq-a1 preliminary r07ds1191ej0200 rev.2.00 page 6 of 7 apr 02, 2014 pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width (igbt) pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width (diode) 0.01 0.1 10 1 10 100 1 m 10 m 100 m 1 10 0.01 1 0.1 10 10 100 1 m 10 m 100 m 1 10 p dm pw t d = pw t j ? c(t) = s (t) ? j ? c j ? c = 2.1 c/w, tc = 25 c 0.05 0.2 0.1 0.5 d = 1 0.02 tc = 25 c switching time test circuit d = 1 0.5 0.2 0.1 0.05 p dm pw t d = pw t j ? c(t) = s (t) ? j ? c j ? c = 0.6 c/w, tc = 25 c 0.02 1 shot pulse 0.01 diode clamp d.u.t rg l v cc 0.01 1 shot pulse tc = 25 c waveform t d(off) t d(on) t f t r 90% 90% 90% 10% 10% 10% v ge i c
rjh60t04dpq-a1 preliminary r07ds1191ej0200 rev.2.00 page 7 of 7 apr 02, 2014 package dimensions 15.94 0.19 5.45 6.15 21.13 0.33 20.19 0.38 4.5 max 3.60 0.1 1.27 0.13 5.45 2.41 0.71 0.1 5.02 0.19 unit: mm ? 6.14g mass[typ.] ? prss0003zh-a renesas code jeita package code previous code package name to-247a 17.63 13.26 2.10 + 0.1 ? 0.2 ordering information orderable part number quan tity shipping container rjh60t04dpq-a1#t0 240 pcs box (tube)
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